Spectral hole burning and zero phonon linewidth in semiconductor nanocrystals

被引：63

作者：

Palinginis, P ^{[1
]}

Tavenner, S

Lonergan, M

Wang, HL

机构：

[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

[2] Univ Oregon, Dept Chem, Eugene, OR 97403 USA

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.67.201307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectral hole burning reveals a sharp zero-phonon line (ZPL) as well as discrete acoustic phonon sidebands in CdSe nanocrystals. The ZPL linewidth obtained from the spectral hole burning depends strongly on the measurement time scale, reflecting effects of spectral diffusion. The nonlinear optical measurement allows us to suppress effects of spectral diffusion leading to a ZPL linewidth as narrow as 6 mueV.

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