Ultralong dephasing time in InGaAs quantum dots

被引：826

作者：

Borri, P

Langbein, W

Schneider, S

Woggon, U

Sellin, RL

Ouyang, D

Bimberg, D

机构：

[1] Univ Dortmund, D-44221 Dortmund, Germany

[2] Inst Festkorperphys TU, D-10623 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.87.157401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We measure a dephasing, time of several hundred picoseconds at low temperature in the groundstate transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-acoustic phonon interactions.

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页码：157401 / 157401

页数：4

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