Dephasing in InAs/GaAs quantum dots

被引：117

作者：

Borri, P

Langbein, W

Mork, J

Hvam, JM

Heinrichsdorff, F

Mao, MH

Bimberg, D

机构：

[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.60.7784

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.

引用

页码：7784 / 7787

页数：4

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