Progress toward solid-state local oscillators at 1 THz

被引：38

作者：

Crowe, TW

Grein, TC

Zimmermann, R

Zimmermann, P

机构：

[1] Semiconductor Device Laboratory, Department of Electric Engineering, University of Virginia, Charlottesville

[2] Radiometer Physics GmbH

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1996年 / 6卷 / 05期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/75.491507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A varactor tripler to 800 GHz with 250 mW output power is reported, This tripler uses a new GaAs Schottky diode which has been optimized fbr high frequency applications, It features a smaller anode diameter and higher epitaxial doping density than previous varactor multipliers. The resulting output power is much greater than has been previously reported at such a high frequency.

引用

页码：207 / 208

页数：2

共 10 条

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