CURRENT SATURATION IN SUBMILLIMETER WAVE VARACTORS

被引:65
作者
KOLLBERG, EL
TOLMUNEN, TJ
FRERKING, MA
EAST, JR
机构
[1] JET PROP LAB,PASADENA,CA 91109
[2] UNIV MICHIGAN,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
基金
美国国家航空航天局;
关键词
D O I
10.1109/22.137387
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In semiconductor; devices the speed of electrons cannot exceed.certain limits. This phenomenon will affect varactor multipliers as well as other high frequency devices where the RF current through the active part of the device is primarily displacement current. Hence, we expect at some point "saturation" of the varactor output power. We will, in this paper, discuss this phenomenon in some detail and show that it severely deteriorates the multiplier performance at higher frequencies. Single barrier varactors (SBV) should have an advantage over GaAs Schottky diode varactors because they can be fabricated on InAs and stacked in a series array, allowing for lower current densities and higher power handling.
引用
收藏
页码:831 / 838
页数:8
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