LARGE-SIGNAL DYNAMIC LOSS IN GALLIUM-ARSENIDE READ AVALANCHE-DIODES

被引：7

作者：

STATZ, H ^{[1
]}

HAUS, HA ^{[1
]}

PUCEL, RA ^{[1
]}

机构：

[1] MIT,FAC ELECT ENGN,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 01期

关键词：

D O I：

10.1109/T-ED.1978.19027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：22 / 33

页数：12

共 6 条

[1] EFFICIENCY ENHANCEMENT IN AVALANCHE-DIODES BY DEPLETION-REGION-WIDTH MODULATION [J].

BLAKEY, PA ;

CULSHAW, B ;

GIBLIN, RA .

ELECTRONICS LETTERS, 1974, 10 (21) :435-436

[2] EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES [J].

CONSTANT, E ;

MIRCEA, A ;

PRIBETICH, J ;

FARRAYRE, A .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3934-3940

[3]

HIRACHI Y, 1976, TECH DIG, P102

[4] PREMATURE COLLECTION MODE IN IMPATT DIODES [J].

KUVAS, RL ;

SCHROEDER, WE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) :549-558

[5] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

[6] NOISE IN GALLIUM-ARSENIDE AVALANCHE READ DIODES [J].

STATZ, H ;

PUCEL, RA ;

SIMPSON, JE ;

HAUS, HA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1075-1085

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