NOISE IN GALLIUM-ARSENIDE AVALANCHE READ DIODES

被引：20

作者：

STATZ, H

PUCEL, RA

SIMPSON, JE

HAUS, HA

机构：

[1] RAYTHEON RES DIV,WALTHAM,MA 02154

[2] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 09期

关键词：

D O I：

10.1109/T-ED.1976.18539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1075 / 1085

页数：11

共 17 条

[1]

Convert G., 1971, Revue Technique Thomson-CSF, V3, P419

[2] NOISE IN IMPATT-DIODE OSCILLATORS AT LARGE-SIGNAL LEVELS [J].

GOEDBLOED, JJ ;

VLAARDINGERBROEK, MT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (06) :342-351

[3] OPTIMUM NOISE MEASURE OF IMPATT DIODES [J].

HAUS, HA ;

STATZ, H ;

PUCEL, RA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1971, MT19 (10) :801-+

[4] 10-W AND 12-W GAAS IMPATTS [J].

IGLESIAS, DE ;

IRVIN, JC ;

NIEHAUS, WC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) :200-200

[5] NOISE GENERATION UNDER LARGE SIGNAL CONDITIONS IN READ MICROWAVE AVALANCHE DIODE [J].

INKSON, JC .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (01) :1-&

[6]

KAMKE E, 1959, DIFFERENTIALGLEICHUN, P16

[7]

KIM CK, 1973, 4TH P BIENN CORN EL, P299

[8] DETERMINATION OF SATURATED ELECTRON VELOCITY IN GAAS [J].

KRAMER, B ;

MIRCEA, A .

APPLIED PHYSICS LETTERS, 1975, 26 (11) :623-625

[9]

Kurokawa K., 1968, IEEE T MICROW THEORY, V16, P234

[10] QUASISTATIC APPROXIMATION FOR SEMICONDUCTOR AVALANCHES [J].

KUVAS, R ;

LEE, CA .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1743-&

← 1 2 →