DETERMINATION OF SATURATED ELECTRON VELOCITY IN GAAS

[1] INDIRECT ELECTRON DRIFT VELOCITY VERSUS ELECTRIC FIELD MEASUREMENT IN GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (01) : 28 - +

[2] Boittiaux B., 1969, Acta Electronica, V12, P157

[3] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5392 - &

[4] TEMPERATURE DEPENDENCE OF HOLE VELOCITY IN PARA GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2864 - &

[5] IMPATT DIODE QUASI-STATIC LARGE-SIGNAL MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (08) : 469 - 479

[6] DEGROOT J, 1972, ACTA ELECTRON, V15, P145

[7] FARRAYRE A, 1974, ACTA ELECTRON, V17, P99

[8] GODSCHALK LF, 1972, 4788 PHIL NAT LAB RE

[9] TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 539 - &

[10] KALLBACK B, 1973, ELECTRON LETT, V9, P11, DOI 10.1049/el:19730008

[1] INDIRECT ELECTRON DRIFT VELOCITY VERSUS ELECTRIC FIELD MEASUREMENT IN GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (01) : 28 - +

[2] Boittiaux B., 1969, Acta Electronica, V12, P157

[3] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5392 - &

[4] TEMPERATURE DEPENDENCE OF HOLE VELOCITY IN PARA GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2864 - &

[5] IMPATT DIODE QUASI-STATIC LARGE-SIGNAL MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (08) : 469 - 479

[6] DEGROOT J, 1972, ACTA ELECTRON, V15, P145

[7] FARRAYRE A, 1974, ACTA ELECTRON, V17, P99

[8] GODSCHALK LF, 1972, 4788 PHIL NAT LAB RE

[9] TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 539 - &

[10] KALLBACK B, 1973, ELECTRON LETT, V9, P11, DOI 10.1049/el:19730008