TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS

被引：15

作者：

HALL, R

LECK, JH

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1968年 / 25卷 / 06期

关键词：

D O I：

10.1080/00207216808938120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：539 / &

共 12 条

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[3] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS [J].

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[5] BREAKDOWN VOLTAGE OF GRADE GALLIUM ARSENIDE P-N JUNCTIONS [J].

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[9] EFFECT OF TEMPERATURE ON IONIZATION COEFFICIENT IN SILICON [J].

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[10] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

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