NOISE IN IMPATT-DIODE OSCILLATORS AT LARGE-SIGNAL LEVELS

被引：25

作者：

GOEDBLOED, JJ ^{[1
]}

VLAARDINGERBROEK, MT ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

关键词：

D O I：

10.1109/T-ED.1974.17926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：342 / 351

页数：10

共 33 条

[1]

Convert G., 1971, Revue Technique Thomson-CSF, V3, P419

[2]

DELAGEBEAUDEUF D, 1968, ONDE ELECTR, V48, P722

[3] THEORY OF OSCILLATOR NOISE AND ITS APPLICATION TO IMPATT DIODES [J].

FIKART, JL ;

GOUD, PA .

[4] FM NOISE OF LOW-LEVEL-OPERATING IMPATT-DIODE OSCILLATORS [J].

GOEDBLOE.JJ .

[5] INTRINSIC AM NOISE IN SINGLY TUNED IMPATT DIODE OSCILLATORS [J].

GOEDBLOED, JJ .

GOEDBLOED, JJ .

[7]

GOEDBLOED JJ, 1973, THESIS PHILIPS RES R

[8]

GOEDBLOED JJ, 1970, P MOGA C AMSTERDAM, P1236

HINES, ME .

[10] NOISE THEORY FOR READ TYPE AVALANCHE DIODE [J].

HINES, ME .