INTRINSIC AM NOISE IN SINGLY TUNED IMPATT DIODE OSCILLATORS

被引：2

作者：

GOEDBLOED, JJ ^{[1
]}

机构：

[1] PHILIPS RES LAB, EINDHOVEN, NETHERLANDS

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 08期

关键词：

D O I：

10.1109/T-ED.1973.17738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：752 / 754

页数：3

共 13 条

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SOLID-STATE ELECTRONICS, 1972, 15 (06) :635-+

[4]

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[6] INFLUENCE OF CARRIER DIFFUSION ON INTRINSIC RESPONSE TIME OF SEMICONDUCTOR AVALANCHES [J].

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GOEDBLOED, JJ .

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[7] AMPLITUDE FLUCTUATIONS OF A READ DIODE OSCILLATOR [J].

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ROBINSON, BB .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1272-&

[8] SOME BASIC CHARACTERISTICS OF BROADBAND NEGATIVE RESISTANCE OSCILLATOR CIRCUITS [J].

KUROKAWA, K .

BELL SYSTEM TECHNICAL JOURNAL, 1969, 48 (06) :1937-+

[9] NOISE IN IMPATT DIODES - INTRINSIC PROPERTIES [J].

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[10] ANALYSIS OF LARGE-SIGNAL NOISE IN READ OSCILLATORS [J].

SJOLUND, A .

SOLID-STATE ELECTRONICS, 1972, 15 (09) :971-&

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