OPTIMUM NOISE MEASURE OF IMPATT DIODES

被引：10

作者：

HAUS, HA

STATZ, H

PUCEL, RA

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1971年 / MT19卷 / 10期

关键词：

D O I：

10.1109/TMTT.1971.1127643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：801 / +

页数：1

共 10 条

[1]

COURANT R, 1953, METHODS MATHEMATICAL, V1, P335

[2] A SMALL-SIGNAL THEORY OF AVALANCHE NOISE IN IMPATT DIODES [J].

GUMMEL, HK ;

BLUE, JL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :569-&

[3]

Haus H. A., 1959, CIRCUIT THEORY LINEA

[4] NOISE THEORY FOR READ TYPE AVALANCHE DIODE [J].

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :158-&

[5]

KIM CK, 1969, 0269129 MICR STAT EL

[6] MICROWAVE AMPLIFICATION WITH GAAS AVALANCHE DIODES [J].

KUNO, HJ ;

COLLARD, JR ;

GOBAT, A .

ELECTRONICS LETTERS, 1968, 4 (24) :540-&

[7] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :137-+

[8] BACKGROUND NOISE IN NONLINEAR OSCILLATORS [J].

MULLEN, JA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (08) :1467-1473

[9] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J].

SZE, SM ;

GIBBONS, G .

SOLID-STATE ELECTRONICS, 1966, 9 (09) :831-&

[10] OUTPUT SPECTRUM OF IMPATT-DIODE OSCILLATORS [J].

VLAARDINGERBROEK, MT .

ELECTRONICS LETTERS, 1969, 5 (21) :521-+

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