Temperature dependent space-charge-limited currents in amorphous and disordered semiconductors

被引:41
作者
Schauer, F [1 ]
Nespurek, S [1 ]
Valerian, H [1 ]
机构
[1] ACAD SCI CZECH REPUBL,INST MACROMOLEC CHEM,CR-16206 PRAGUE 6,CZECH REPUBLIC
关键词
D O I
10.1063/1.362897
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature dependent space-charge-limited currents (SCLCs), manifested by the dependence of the apparent pre-exponential factor of space-charge-limited (SCL) conductivity on the injection dependent activation energy, is examined. Starting from the exact theory of SCLC, the formula for the activation energy of SCL injection dependent conductivity was derived, The method of SCL currents seems to be a unique method to determine the true electrical conductivity pre-exponential factor of the electrical conductivity. Systematic determination of the relation of the pre-exponential factor of the conductivity on its activation energy during the measurements of voltage and temperature dependencies of SCL currents gives information on the reliability of the reconstruction of the density-of-electronic states. (C) 1996 American Institute of Physics.
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页码:880 / 888
页数:9
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