THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS

被引:132
作者
MACKENZIE, KD
LECOMBER, PG
SPEAR, WE
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1982年 / 46卷 / 04期
关键词
D O I
10.1080/13642818208246448
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:377 / 389
页数:13
相关论文
共 20 条
[1]   PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712
[2]   DLTS STUDY OF THE GAP STATES OF AMORPHOUS SI1-XHX ALLOYS [J].
COHEN, JD ;
LANG, DV ;
BEAN, JC ;
HARBISON, JP .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :581-586
[3]   DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON [J].
COHEN, JD ;
LANG, DV ;
HARBISON, JP .
PHYSICAL REVIEW LETTERS, 1980, 45 (03) :197-200
[4]   DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].
DENBOER, W .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :451-454
[5]   THE CHARACTERISTICS OF HIGH-CURRENT AMORPHOUS-SILICON DIODES [J].
GIBSON, RA ;
LECOMBER, PG ;
SPEAR, WE .
APPLIED PHYSICS, 1980, 21 (04) :307-311
[6]  
Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
[7]   SIMPLIFIED THEORY OF SPACE-CHARGE-LIMITED CURRENTS IN AN INSULATOR WITH TRAPS [J].
LAMPERT, MA .
PHYSICAL REVIEW, 1956, 103 (06) :1648-1656
[8]  
LANG DV, 1982, PHYS REV B
[9]  
LECOMBER PF, 1981, SOLID STATE SCI, V25, P46
[10]   INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].
MADAN, A ;
LECOMBER, PG ;
SPEAR, WE .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257