A new nanocomposite resist for low and high voltage electron beam lithography

被引：17

作者：

Ali, MA

Gonsalves, KE

Agrawal, A

Jeyakumar, A

Henderson, CL

机构：

[1] UNCC, Polymer Chem NanoTechnol Lab, Dept Chem, Charlotte, NC 28223 USA

[2] UNCC, Cameron Appl Res Ctr, Charlotte, NC 28223 USA

[3] Georgia Inst Technol, Sch Chem Engn, Atlanta, GA 30332 USA

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 70卷 / 01期

关键词：

EB; lithography; resist; nanocomposite; photoacid generator;

D O I：

10.1016/S0167-9317(03)00363-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A novel nanocomposite photoresist was synthesized and characterized for use in both low and high voltage electron beam lithography. This resist system is shown to display the ideal combination of both enhanced etch resistance and enhanced sensitivity required to satisfy both low and high voltage patterning applications. Resist sensitivity was enhanced by the direct incorporation of a photoacid generating monomer into the resist polymer backbone while the etch resistance of the material was improved by copolymerization with a POSS containing monomer. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：19 / 29

页数：11

共 18 条

[1]

High sensitivity nanocomposite resists for EUV lithography [J].