High sensitivity nanocomposite resists for EUV lithography

被引：13

作者：

Ali, MA

Gonsalves, KE

Golovkina, V

Cerrina, F

机构：

[1] Univ N Carolina, Dept Chem, Polymer Chem NanoTechnol Ltd, Charlotte, NC 28223 USA

[2] Univ N Carolina, Cameron Appl Res Ctr, Charlotte, NC 28223 USA

[3] Univ Wisconsin, Ctr Nanotechnol, Stoughton, WI 53589 USA

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 65卷 / 04期

关键词：

EUV; lithography; resist; nanocomposite; photoacid generator;

D O I：

10.1016/S0167-9317(03)00164-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A novel nanocomposite photoresist was synthesized for extreme ultraviolet lithography (EUVL) by a radical polymerization process. This resist system exhibited enhanced sensitivity and contrast for EUVL. The potential for EUVL nanofeatures is also examined. The high sensitivity and the desirable contrast in this resist, indicates that it is a promising candidate not only for sub-100 nm resolution EUVL, but also for X-ray lithography and low voltage electron beam lithography. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：454 / 462

页数：9

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