Extreme ultraviolet lithography

被引：287

作者：

Gwyn, CW ^{[1
]}

Stulen, R

Sweeney, D

Attwood, D

机构：

[1] EUV LLC, Livermore, CA 94551 USA

[2] VNL, Livermore, CA 94551 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extreme ultraviolet (EUV) lithography tool using 13.4 nm radiation is being developed by a consortium of integrated circuit (IC) manufacturers to support 100 nm imaging for integrated circuit production. The 4x, 0.1 NA alpha tool has a >1 mu m depth of focus, all reflective optics, a xenon laser plasma source, and robust reflective masks. The technology is expected to support feature scaling down to 30 nm. (C) 1998 American Vacuum Society. [S0734-211X(98)12006-1].

引用

页码：3142 / 3149

页数：8

共 6 条

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