First lithographic results from the extreme ultraviolet Engineering Test Stand

被引:43
作者
Chapman, HN
Ray-Chaudhuri, AK
Tichenor, DA
Replogle, WC
Stulen, RH
Kubiak, GD
Rockett, PD
Klebanoff, LE
O'Connell, D
Leung, AH
Jefferson, KL
Wronosky, JB
Taylor, JS
Hale, LC
Blaedel, K
Spiller, EA
Sommargren, GE
Folta, JA
Sweeney, DW
Gullikson, EM
Naulleau, P
Goldberg, KA
Bokor, J
Attwood, DT
Mickan, U
Hanzen, R
Panning, E
Yan, PY
Gwyn, CW
Lee, SH
机构
[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[2] Sandia Natl Labs, Livermore, CA 94551 USA
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
[6] ASML, NL-5503 LA Veldhoven, Netherlands
[7] Intel Corp, Santa Clara, CA 95052 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期
关键词
D O I
10.1116/1.1414017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The extreme ultraviolet (EUV) Engineering Test Stand (ETS) is a step-and-scan lithography tool that operates at a wavelength of 13.4 nm. It has been developed to demonstrate full-field EUV imaging and acquire system learning for equipment manufacturers to develop commercial tools. The initial integration of the tool is being carried out using a developmental set of projection optics, while a second, higher-quality, projection optics is being assembled and characterized in a parallel effort. We present here the first lithographic results from the ETS, which include both static and scanned resist images of 100 nm dense and isolated features throughout the ring field of the projection optics. Accurate lithographic models have been developed and compared with the experimental results. (C) 2001 American Vacuum Society.
引用
收藏
页码:2389 / 2395
页数:7
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