PECVD SiC as a chemical resistant material in MEMS

被引：4

作者：

Guo, Hui ^{[1
]}

Wang, Yu ^{[1
]}

Chen, Sheng ^{[1
]}

Zhang, Guobing ^{[1
]}

Zhang, Haixia ^{[1
]}

Li, Zhihong ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, MEMS Res Ctr, Beijing 100871, Peoples R China

来源：

2006 1ST IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3 | 2006年

关键词：

PECVD; SiC; etch mask; device protection; MEMS;

D O I：

10.1109/NEMS.2006.334900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Silicon Carbide (SiC) is a promising material for the device operating in hash environment, such as high temperature, high pressure or erodent environment, owning to its excellent electrical, mechanical, and chemical properties. The PECVD process allows deposition of SiC at low temperature (200 degrees C-400 degrees C), which makes SiC has better compatibility in Post-CMOS processes. In this paper, PECVD SiC has been investigated as a chemical resistant material in MEMS systematically. SiC was utilized as a coating layer to protect micromachined polysilicon devices from erosive environment and as a wet-etch mask to pattern silicon and glass. SiC was also used to construct microstructures taking the merit of SiC's chemical stability.

引用

页码：805 / +

页数：2

共 8 条

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[2]

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