Silicon carbide MEMS for harsh environments

被引：363

作者：

Mehregany, M ^{[1
]}

Zorman, CA ^{[1
]}

Rajan, N ^{[1
]}

Wu, CH ^{[1
]}

机构：

[1] Case Western Reserve Univ, Dept Elect Engn & Appl Phys, Microfabricat Lab, Cleveland, OH 44106 USA

来源：

PROCEEDINGS OF THE IEEE | 1998年 / 86卷 / 08期

基金：

美国国家航空航天局;

关键词：

harsh environments; high-temperature sensors; MEMS; SiC processing technology; silicon carbide;

D O I：

10.1109/5.704265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(S)ilicon carbide (SiC) is a promising material for the development of high-temperature solid-state electronics and transducers, owing to its excellent electrical, mechanical, and chemical properties. This paper is a review of silicon carbide for microelectromechanical systems (SiC MEMS). Current efforts in developing SiC MEMS to extend the silicon-based MEMS technology to applications in harsh environments are discussed. A summary is presented of the material properties that make SiC an attractive material for use in such environments. Challenges faced in the development of processing techniques are also outlined. Last, a review of the current state of SiC MEMS devices and issues facing future progress are presented.

引用

页码：1594 / 1610

页数：17

共 62 条

[1] STRESS IN CHEMICALLY VAPOUR-DEPOSITED SILICON FILMS [J].