Preparation of SnS films with zinc blende structure by successive ionic layer adsorption and reaction method

被引：66

作者：

Gao, Chao ^{[1
]}

Shen, Honglie ^{[1
]}

Sun, Lei ^{[1
]}

Huang, Haibin ^{[1
]}

Lu, Linfeng ^{[1
]}

Cai, Hong ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Nanjing 210016, Peoples R China

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 20期

关键词：

SnS; Thin films; Zinc blende structure; Solar energy materials; SULFIDE THIN-FILMS;

D O I：

10.1016/j.matlet.2010.07.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline SnS thin films have been prepared by a modified SILAR (successive ionic layer adsorption and reaction) method, in which certain quantity of NH4Cl was added to the cation precursor solution. The films have a novel zinc blende structure. The obtained SnS films are slightly rich in Sn component. There are small amounts of 0 impurity existing in the films, but no other impurity such as N or Cl is found in the films. The dark conductivity of the films is about 10(-6)Omega(-1)cm(-1). The polycrystalline films have a direct (forbidden) bandgap of 1.71 eV. The optical adsorption coefficient is above 10(4) cm(-1) when the photon energy is larger than 1.4 eV. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2177 / 2179

页数：3

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