Atomic layer deposition of CdxZn1-xS films

被引:26
作者
Bakke, Jonathan. R. [1 ]
Tanskanen, Jukka T. [1 ,3 ]
Jung, Hee Joon [2 ]
Sinclair, Robert [2 ]
Bent, Stacey F. [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Univ Eastern Finland, Dept Chem, Joensuu 80130, Finland
基金
美国国家科学基金会;
关键词
CHEMICAL-VAPOR-DEPOSITION; SOLUTION THIN-FILMS; OPTICAL-PROPERTIES; CD1-XZNXS ALLOY; SOLAR-CELL; GROWTH; ZNS; CDS; SEMICONDUCTORS; PARAMETERS;
D O I
10.1039/c0jm02786c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Deposition of CdxZn1-xS has been demonstrated with atomic layer deposition (ALD) using diethylzinc (DEZn), dimethylcadmium (DMCd), and hydrogen sulfide as the precursors, and DFT calculations were performed to simulate the ALD process and the properties of the deposited films. The relative ratio of the pulses is varied for DMCd and DEZn to achieve different compositions over the spectrum from pure CdS to pure ZnS. Overall, the cadmium content in the films is higher than would be expected both as a function of pulse ratio and of temperature based on the growth rates of the binary films. At 150 degrees C pure ZnS shows almost pure cubic nature; however, the wurtzite content increases with the presence of cadmium until the film is approximately 10% wurtzite for pure CdS. Transmission electron microscopy (TEM) with high resolution confirms the coexistence of zincblende and wurtzite within grains due to the presence of stacking faults. The roughness of the films is a function of the composition, and the band gap and index of refraction can be finely tuned with composition.
引用
收藏
页码:743 / 751
页数:9
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