Synthesis and thermoelectric properties of p-type Ba8Ga16ZnxGe30-x type-I clathrates

被引：25

作者：

Deng, Shukang ^{[1
]}

Tang, Xinfeng ^{[1
]}

Zhang, Qingjie ^{[1
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synthesis & Process, Wuhan 430070, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2769781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn-doping Ba8Ga16ZnxGe30-x (x=2.4, 2.6, 2.8, 3.0, 3.2) clathrates with different Zn contents were synthesized by combining the solid-state reaction with the spark plasma sintering method. The effects of Zn content on thermoelectric properties were investigated. The results show that all specimens exhibit p-type conduction characteristics. The electrical conductivity, the room-temperature carrier mobility, and the thermal conductivity decrease with increasing Zn content for Zn-doped Ba8Ga16ZnxGe30-x compounds, while the room-temperature carrier concentration N-p increases with increasing Zn content. The carrier scattering mechanism is mainly ionized impurity mechanism in the low-temperature range (T < 200 K), and gradually changes to an acoustical mechanism with the rising temperature. In all p-type Ba8Ga16ZnxGe30-x compounds, Ba8Ga16Zn3.2Ge26.8 exhibits the highest Seebeck coefficient with the value of 250 mu V/K at 300 K and 307 mu V/K around 700 K, respectively. The maximum ZT value of 0.38 is obtained at 790 K for Ba8Ga16Zn3.0Ge27.0. (C) 2007 American Institute of Physics.

引用

页数：5

共 24 条

[1] MOBILITY OF ELECTRONS AND HOLES IN PBS, PBSE, AND PBTE BETWEEN ROOM TEMPERATURE AND 4.2-DEGREES-K [J].