Fractal surface characterization of chalcogenide electrodeposits

被引:5
作者
Antonucci, PL
Barberi, R
Arico, AS
Amoddeo, A
Antonucci, V
机构
[1] UNIV REGGIO CALABRIA,FAC ENGN,INST CHEM,I-87036 RENDE,COSENZA,ITALY
[2] UNIV CALABRIA,INFM SEZ,I-87036 RENDE,COSENZA,ITALY
[3] CNR,INST TRANSFORMAT & STORAGE ENERGY,I-98126 MESSINA,ITALY
[4] UNIV CALABRIA,DEPT PHYS,I-87036 RENDE,COSENZA,ITALY
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 38卷 / 1-2期
关键词
electrodeposits; iron sulphide; zinc telluride; thin films;
D O I
10.1016/0921-5107(95)01240-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrodeposited iron sulphide and zinc telluride thin films on tin conductive oxide substrates were investigated by cyclic voltammetry (CV) and atomic force microscopy (AFM). CV analysis has allowed the determination of the potential region where selective deposition of Fe1-xS (Is = 0.17) and ZnTe semiconductors occurs. The split island method has been applied to AFM images for the characterization of the fractal properties of Fe1-xS and ZnTe electrodeposits. Values of the fractal dimension of surfaces (2.3-2.5) account for a diffusion controlled growth model for all the samples investigated. The influence of preparative variables in determining the observed results has been discussed.
引用
收藏
页码:9 / 15
页数:7
相关论文
共 26 条
[21]   ADVANCES IN CDTE N-I-P PHOTOVOLTAICS [J].
MEYERS, PV .
SOLAR CELLS, 1989, 27 (1-4) :91-98
[22]   A RE-EXAMINATION OF THE MECHANISMS OF ELECTRODEPOSITION OF CDX AND ZNX (X = SE, TE) SEMICONDUCTORS BY THE CYCLIC PHOTOVOLTAMMETRIC TECHNIQUE [J].
MISHRA, KK ;
RAJESHWAR, K .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1989, 273 (1-2) :169-182
[23]  
POITIER GE, 1991, J VAC SCI TECHNOL A, V9, P1630
[25]  
UETANI Y, 1978, 28 POW SOUR S EL SOC, P219
[26]  
VICSEK T, 1989, FRACTAL GROWTH PHENO, P421