AlGaN/GaN-HEMTs for power applications up to 40 GHz

被引：5

作者：

Kiefer, R ^{[1
]}

Quay, R ^{[1
]}

Müller, S ^{[1
]}

Köhler, K ^{[1
]}

van Raay, F ^{[1
]}

Raynor, B ^{[1
]}

Pletschen, W ^{[1
]}

Massler, H ^{[1
]}

Ramberger, S ^{[1
]}

Mikulla, M ^{[1
]}

Weimann, G ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 0.15 mum T-gate AlGaN/GaN-HEMT 2-inch technology has been developed. Transistors with 120 mum gatewidth show a peak transconductance of 300 mS/mm and cut-off frequencies f(t) and f(max). of 65 GHz and 149 GHz, respectively. Large periphery 720 pin gatewidth devices are capable of CW operation up to 40 GHz yielding an output power of 0.91 W and a linear gain of 6 dB at 35 GHz To the authors' knowledge these results represent the highest absolute power level so far achieved with a GaN-HEMT in the K-a-band.

引用

页码：502 / 504

页数：3

共 3 条

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ELECTRONICS LETTERS, 2001, 37 (08) :528-530

[2]

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ELECTRONICS LETTERS, 2000, 36 (14) :1234-1236

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