学术探索
学术期刊
新闻热点
数据分析
智能评审

AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20GHz

被引：15
作者：
Vescan, A
Dietrich, R
Wieszt, A
Schurr, A
Leier, H
Piner, EL
Redwing, JM
机构：
[1] DaimlerChrysler AG, Res & Technol, D-89013 Ulm, Germany
[2] ATMI Epitron, Phoenix, AZ 85027 USA
[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 14期
关键词：
D O I：
10.1049/el:20000898
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The power performance of AlGaN/GaN MODFETs grown on semi-insulating BC is reported. The epitaxial layers were grown by MOCVD with a good uniformity and excellent carrier mobility of 1300cm(2)/Vs at room temperature. Devices with gate length of 0.3 mu m were fabricated and characterised, yielding a record transconductance of 300 mS/nm. Active load-pull measurements yielded 594mW total output power at 20GHz. At 15GHz a total output power of 3.3W was measured. To the authors' knowledge: these results represent the highest output power so far achieved From a single GaN-device at Ku and K-band.
引用
收藏
页码：1234 / 1236
页数：3
相关论文
共 9 条
[1]   The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].
Green, BM ;
Chu, KK ;
Chumbes, EM ;
Smart, JA ;
Shealy, JR ;
Eastman, LF .
IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :268-270
[2]   Large signal frequency dispersion of AlGaN GaN heterostructure field effect transistors [J].
Kohn, E ;
Daumiller, I ;
Schmid, P ;
Nguyen, NX ;
Nguyen, CN .
ELECTRONICS LETTERS, 1999, 35 (12) :1022-1024
[3]   Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies [J].
Nguyen, C ;
Nguyen, NX ;
Grider, DE .
ELECTRONICS LETTERS, 1999, 35 (16) :1380-1382
[4]   High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE [J].
Nguyen, NX ;
Micovic, M ;
Wong, WS ;
Hashimoto, P ;
McCray, LM ;
Janke, P ;
Nguyen, C .
ELECTRONICS LETTERS, 2000, 36 (05) :468-469
[5]   High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates [J].
Sheppard, ST ;
Doverspike, K ;
Pribble, WL ;
Allen, ST ;
Palmour, JW ;
Kehias, LT ;
Jenkins, TJ .
IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) :161-163
[6]  
SHEPPARD ST, 1998, 56 ANN DEV RES C CHA
[7]   High-power 10-GHz operation of AlGaN HFET's on insulating SiC [J].
Sullivan, GJ ;
Chen, MY ;
Higgins, JA ;
Yang, JW ;
Chen, Q ;
Pierson, RL ;
McDermott, BT .
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (06) :198-200
[8]  
Wu YF, 1999, IEICE T ELECTRON, VE82C, P1895
[9]   Short-channel Al0.5Ga0.5N/GaN MODFETs with power density >3W/mm at 18GHz [J].
Wu, YF ;
Keller, BP ;
Fini, P ;
Pusl, J ;
Le, M ;
Nguyen, NX ;
Nguyen, C ;
Widman, D ;
Keller, S ;
Denbaars, SP ;
Mishra, UK .
ELECTRONICS LETTERS, 1997, 33 (20) :1742-1743
1