High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

被引：87

作者：

Nguyen, NX ^{[1
]}

Micovic, M ^{[1
]}

Wong, WS ^{[1
]}

Hashimoto, P ^{[1
]}

McCray, LM ^{[1
]}

Janke, P ^{[1
]}

Nguyen, C ^{[1
]}

机构：

[1] LLC, HLR Labs, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 05期

关键词：

Microwaves - Molecular beam epitaxy - Semiconducting aluminum compounds - Semiconducting gallium compounds - Semiconductor doping - Semiconductor growth - Silicon carbide - Substrates;

D O I：

10.1049/el:20000352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance GaN/AlGaN MODFETs grown by MBE directly on SiC substrate have been successfully fabricated and characterised. The epitaxial layers of the device were grown by RF-assisted MBE. Excellent device uniformity, reproducibility and scalability were obtained. A maximum output density of 6.5W/mm was obtained for a 0.1mm device. On scaling to 1.0mm gate-width, a total output power of 6.3W with 38% PPS at 10GHz was achieved. These device results demonstrate the excellent potential of GaN-based FETs as power calls for practical microwave applications.

引用

页码：468 / 469

页数：2

共 13 条

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