AlGaN-GaN heterostructure FETs with offset gate design

被引：39

作者：

Gaska, R

Chen, Q

Yang, J

Khan, MA

Shur, MS

Ping, A

Adesida, I

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180

[2] UNIV ILLINOIS,MICROELECT LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 14期

关键词：

field effect transistors;

D O I：

10.1049/el:19970818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.

引用

页码：1255 / 1257

页数：3

共 8 条

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