Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

被引：105

作者：

Khan, MA

Chen, Q

Shur, MS

Dermott, BT

Higgins, JA

Burm, J

Schaff, W

Eastman, LF

机构：

[1] UNIV VIRGINIA,DEPT OPT ENGN,CHARLOTTESVILLE,VA 22093

[2] ROCKWELL INT SCI CTR,THOUSAND OAKS,CA 91360

[3] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 04期

关键词：

field effect transistors; microwave transistors;

D O I：

10.1049/el:19960206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the improved microwave performance of short AlGaN/GaN doped channel heterostructure field effect transistors. These transistors with 0.25 mu m gates have a cutoff frequency f(T) up to 36.1 GHz (the highest reported value for a wide-bandgap semiconductor) and a maximum oscillation frequency f(max) similar or equal to 70.8 GHz. This value of f(T) is the highest value reported for any wide-bandgap semiconductor device.

引用

页码：357 / 358

页数：2

共 8 条

[1] CHEN Q, UNPUB APPL PHYS LETT
[2] KELNER G, 1995, PROPERTIES SILICON C, P231
[3] TEMPERATURE ACTIVATED CONDUCTANCE IN GAN/ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS OPERATING AT TEMPERATURES UP TO 300-DEGREES-C
KHAN, MA
SHUR, MS
KUZNIA, JN
CHEN, Q
BURM, J
SCHAFF, W
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (09) : 1083 - 1085
[4] MICROWAVE PERFORMANCE OF A 0.25 MU-M GATE ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR
KHAN, MA
KUZNIA, JN
OLSON, DT
SCHAFF, WJ
BURM, JW
SHUR, MS
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (09) : 1121 - 1123
[5] KHAN MA, UNPUB IEEE ELECT DEV
[6] KHAN MA, UNPUB APPL PHYS LETT
[7] ALGAAS/INGAAS/GAAS QUANTUM-WELL DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
RUDEN, PP
SHUR, M
AKINWANDE, AI
NOHAVA, JC
GRIDER, DE
BAEK, JH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (10) : 2171 - 2175
[8] SHUR MS, 1995, I PHYS C SER, V141, P419

← 1 →