High-power 10-GHz operation of AlGaN HFET's on insulating SiC

被引：105

作者：

Sullivan, GJ ^{[1
]}

Chen, MY

Higgins, JA

Yang, JW

Chen, Q

Pierson, RL

McDermott, BT

机构：

[1] Rockwell Int Sci Ctr, Thousand Oaks, CA 91360 USA

[2] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

[3] APA Opt, APA Inc, Blaine, MN 55449 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 06期

关键词：

D O I：

10.1109/55.678543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first high-power RF characterization of AlGaN HFET's fabricated on electrically insulating SIC substrates. A record total power of 2.3 W at 10 GHz was measured from a 1280-mu m wide HFET at V-ds = 33 V. An excellent RF power density of 2.8 W/mm was measured on a 320-mu m wide HFET. These values are a result of the high thermal conductivity of SiC, relative to the typical substrate, sapphire.

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页码：198 / 200

页数：3

相关论文

共 16 条

[1]

ASBECK P, COMMUNICATION

[2] Piezoelectric charge densities in AlGaN/GaN HFETs [J].

Asbeck, PM ;

Yu, ET ;

Lau, SS ;

Sullivan, GJ ;

VanHove, J ;

Redwing, J .

ELECTRONICS LETTERS, 1997, 33 (14) :1230-1231

[3] AlGaN/GaN HEMTs grown on SiC substrates [J].

Binari, SC ;

Redwing, JM ;

Kelner, G ;

Kruppa, W .

ELECTRONICS LETTERS, 1997, 33 (03) :242-243

[4] Microwave performance of 0.25 mu m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures [J].

Chen, Q ;

Gaska, R ;

Khan, MA ;

Shur, MS ;

Ping, A ;

Adesida, I ;

Burm, J ;

Schaff, WJ ;

Eastman, LF .

ELECTRONICS LETTERS, 1997, 33 (07) :637-639

[5] High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates [J].

Chen, Q ;

Yang, JW ;

Kahn, MA ;

Ping, AT ;

Adesida, I .

ELECTRONICS LETTERS, 1997, 33 (16) :1413-1415

[6] AlGaN-GaN heterostructure FETs with offset gate design [J].

Gaska, R ;

Chen, Q ;

Yang, J ;

Khan, MA ;

Shur, MS ;

Ping, A ;

Adesida, I .

ELECTRONICS LETTERS, 1997, 33 (14) :1255-1257

[7] High-temperature performance of AlGaN/GaN HFET's on SiC substrates [J].

Gaska, R ;

Chen, Q ;

Yang, J ;

Osinsky, A ;

Khan, MA ;

Shur, MS .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (10) :492-494

[8]

GRIDER D, 1997, 1997 MAFET THRUST 3

[9]

Khan MA, 1996, IEEE ELECTR DEVICE L, V17, P584, DOI 10.1109/55.545778

[10] Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors [J].

Khan, MA ;

Chen, Q ;

Yang, JW ;

Shur, MS ;

Dermott, BT ;

Higgins, JA .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (07) :325-327