Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

被引：37

作者：

Luo, B ^{[1
]}

Mehandru, R

Kim, J

Ren, F

Gila, BP

Onstine, AH

Abernathy, CR

Pearton, SJ

Fitch, R

Gillespie, J

Jenkins, T

Sewell, J

Via, D

Crespo, A

Irokawa, Y

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] USAF, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[4] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2002年 / 149卷 / 11期

关键词：

D O I：

10.1149/1.1512675

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiNX produced similar to70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and similar to80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging. (C) 2002 The Electrochemical Society.

引用

页码：G613 / G619

页数：7

共 51 条

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