Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

被引：188

作者：

Arulkumaran, S ^{[1
]}

Egawa, T ^{[1
]}

Ishikawa, H ^{[1
]}

Jimbo, T ^{[1
]}

Umeno, M ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Micro Struct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.122009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (S(i)3N(4))/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5X10(11) eV(-1) cm(-2)) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3X10(11) eV(-1) cm(-2)) and PECVD Si3N4/n-GaN interface (6.5X10(11) eV(-1) cm(-2)). The inter face state density (N-f) depends on the composition of deposited insulating layers. (C) 1995 American Institute of Physics. [S0003-6951(98)04032-7].

引用

页码：809 / 811

页数：3

共 12 条

[1] XPS STUDIES ON SIOX THIN-FILMS [J].