XPS STUDIES ON SIOX THIN-FILMS

被引：305

作者：

ALFONSETTI, R ^{[1
]}

LOZZI, L ^{[1
]}

PASSACANTANDO, M ^{[1
]}

PICOZZI, P ^{[1
]}

SANTUCCI, S ^{[1
]}

机构：

[1] UNIV LAQUILA,DIPARTIMENTO FIS,I-67010 COPPITO,ITALY

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷

关键词：

D O I：

10.1016/0169-4332(93)90431-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface stoichiometry of SiO(x) thin films (x = 1-2) has been studied by means of X-ray photoelectron spectroscopy. The presence of three Si oxidation states (SiO2, SiO, Si2O3) has been observed through an analysis of the Si2p line shape and the intensity variation of these different silicon oxide signals, as a function of the oxygen content, has been followed. The calculated stoichiometry has been compared with that obtained using the modified Auger parameter method. The good agreement between these results supports the validity of the modified Auger parameter as an easy and fast method to know the surface stoichiometry of SiO(x) films.

引用

页码：222 / 225

页数：4

共 12 条

[1] DETERMINATION OF STOICHIOMETRY OF SIOX THIN-FILMS USING AN AUGER PARAMETER [J].