XPS STUDY OF SIO THIN-FILMS AND SIO METAL INTERFACES

被引:88
作者
NGUYEN, TP
LEFRANT, S
机构
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D O I
10.1088/0953-8984/1/31/019
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:5197 / 5204
页数:8
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共 28 条
[1]   EVIDENCE FOR A SOLID-STATE REACTION AT THE A-SI-SNOX INTERFACE - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY [J].
BADRINARAYANAN, S ;
SINHA, S ;
SINHA, APB .
THIN SOLID FILMS, 1986, 144 (01) :133-137
[2]   MEASUREMENT OF THE INTERLAYER BETWEEN ALUMINUM AND SILICON DIOXIDE USING ELLIPSOMETRIC, CAPACITANCE-VOLTAGE AND AUGER-ELECTRON SPECTROSCOPY TECHNIQUES [J].
CANDELA, GA ;
GALLOWAY, KF ;
LIU, YM ;
FINE, J .
THIN SOLID FILMS, 1981, 82 (02) :183-193
[3]   METAL-SEMICONDUCTOR INTERFACIAL REACTIONS - NI-SI SYSTEM [J].
CHEUNG, NW ;
GRUNTHANER, FJ ;
GRUNTHANER, PJ ;
MAYER, JW ;
ULLRICH, BM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :917-923
[4]   AL REACTION WITH SIO2 - AN AUGER-ELECTRON SPECTROSCOPY AND ENERGY-LOSS SPECTROSCOPY STUDY [J].
DERRIEN, J ;
COMMANDRE, M ;
LAYET, JM ;
SALVAN, F ;
CROS, A .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (04) :247-250
[5]   CHARACTERIZATION OF AMORPHOUS SIOX LAYERS WITH ESCA [J].
FINSTER, J ;
SCHULZE, D ;
MEISEL, A .
SURFACE SCIENCE, 1985, 162 (1-3) :671-679
[6]   LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].
GRUNTHANER, FJ ;
GRUNTHANER, PJ ;
VASQUEZ, RP ;
LEWIS, BF ;
MASERJIAN, J ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1443-1453
[7]   THE LOCALIZATION AND CRYSTALLOGRAPHIC DEPENDENCE OF SI SUBOXIDE SPECIES AT THE SIO2/SI INTERFACE [J].
GRUNTHANER, PJ ;
HECHT, MH ;
GRUNTHANER, FJ ;
JOHNSON, NM .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :629-638
[8]   XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE [J].
GRUNTHANER, PJ ;
GRUNTHANER, FJ ;
MAYER, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :924-929
[9]   SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES [J].
HATTORI, T ;
SUZUKI, T .
APPLIED PHYSICS LETTERS, 1983, 43 (05) :470-472
[10]  
HOAT M, 1976, J PHYS C SOLID STATE, V9, P1535