Crystal growth in Bi-Sr-Ca-Cu-O system

被引：2

作者：

Faqir, H ^{[1
]}

Monnereau, O

Chiba, H

Kikuchi, M

Syono, Y

机构：

[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 980, Japan

[2] Univ Provence, Lab Physicochim Mat, Ctr St Charles, F-13331 Marseille 3, France

来源：

APPLIED SUPERCONDUCTIVITY | 1997年 / 5卷 / 1-6期

关键词：

D O I：

10.1016/S0964-1807(98)00030-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report growth of Bi2Sr2CaCu2O8+delta single crystals with dimensions of 6 x 2 x 0.03 mm(3) using a melt and growth technique. The oxygen content is determined to be delta approximate to 0.13 by iodometric titration. The crystal is shown to be homogeneous and close to stoichiometric cation ratio. The superconducting temperature with a sharp transition width (10-90% level:) of 6-8 K vias determined to be T-c,= 92 K from resistivity and de susceptibility measurements. The predominant impurity phase is a Cu-free crystal, whose composition is identified as Bi10Sr11Ca5Ox,. The crystal structure of Bi10Sr11Ca5Ox, is monoclinic with a = 11.108(1) Angstrom, b = 5.9487(1) Angstrom; c = 19.838 (3) Angstrom and beta = 101.5 degrees (P2(1/c), space group). (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：27 / 31

页数：5

共 17 条

[1]

ALLEGIER C, 1990, PHYSICA C, V168, P499

[2] GROWTH OF HTSC BI-CONTAINING SINGLE-CRYSTALS BY THE SPONTANEOUS CRYSTALLIZATION METHOD [J].