Strain distribution in bent ZnO microwires

被引:44
作者
Dietrich, C. P. [1 ]
Lange, M. [1 ]
Kluepfel, F. J. [1 ]
von Wenckstern, H. [1 ]
Schmidt-Grund, R. [1 ]
Grundmann, M. [1 ]
机构
[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany
关键词
GROWTH;
D O I
10.1063/1.3544939
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZnO microwires grown by carbothermal reduction were mechanically bent and the uniaxial stress state was studied with spatially resolved low-temperature photoluminescence. Inhomogeneous (tensile and compressive) stress (up to +/- 1 GPa) is visualized by the redshift and blueshift of the wire luminescence. Experimentally determined tensile and compressive strain along the c-axis (wire axis) of up to 1.5 %, symmetrically distributed with respect to the central axis (neutral fiber), is achieved, resulting in maximum energetic shifts of +/- 30 meV. Within these experiments, we are able to precisely determine the direct relation between energetic shift of the free A-exciton energy and strain to (-2.04 +/- 0.02) eV. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544939]
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页数:3
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