Growth and properties of III-V compound semiconductor heterostructure nanowires

被引：33

作者：

Gao, Q. ^{[1
]}

Tan, H. H. ^{[1
]}

Jackson, H. E. ^{[2
]}

Smith, L. M. ^{[2
]}

Yarrison-Rice, J. M. ^{[3
]}

Zou, Jin

Jagadish, C. ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[3] Miami Univ, Dept Phys, Oxford, OH 45056 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 01期

基金：

美国国家科学基金会; 澳大利亚研究理事会;

关键词：

CORE-SHELL NANOWIRES; VAPOR-PHASE EPITAXY; LIQUID-SOLID MECHANISM; GAP-GAAS NANOWIRES; SURFACE-FREE GAAS; ELECTRONIC-STRUCTURE; ALGAAS NANOWIRES; NANO-WHISKERS; LASERS; PHOTOLUMINESCENCE;

D O I：

10.1088/0268-1242/26/1/014035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1) B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.

引用

页数：10