Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys -: art. no. 085204

被引：35

作者：

Polimeni, A

Ciatto, G

Ortega, L

Jiang, F

Boscherini, F

Filippone, F

Bonapasta, AA

Stavola, M

Capizzi, M

机构：

[1] Univ Roma La Sapienza, INFM, I-00185 Rome, Italy

[2] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[3] CNR, ESRF, GILDA CRG, F-38043 Grenoble, France

[4] CNRS, Lab Cristallog, F-38042 Grenoble 9, France

[5] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

[6] Univ Bologna, INFM, I-40127 Bologna, Italy

[7] Univ Bologna, Dipartmento Fis, I-40127 Bologna, Italy

[8] CNR, ISM, Staz Roma, I-00016 Monterotondo, Italy

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.68.085204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the effect of hydrogen incorporation on the lattice properties of InxGa1-xAs1-yNy/GaAs heterostructures. The band gap widening observed in the photoluminescence spectra of hydrogenated GaAs1-yNy and InxGa1-xAs1-yNy is accompanied by a lattice expansion along the growth direction, as measured by x-ray diffraction. At the same time, far-infrared spectroscopy reveals that a Ga-N local vibrational mode at similar to472 cm-1 disappears upon hydrogen irradiation. All these effects are reversed upon hydrogen removal from the hydrogenated samples by thermal annealing. Finally, first-principles calculations indicate that a same di-hydrogen complex is responsible for both the band gap reopening and the lattice expansion of hydrogenated InxGa1-xAs1-yNy.

引用

页数：5

共 23 条

[1] Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1-xNx layers [J].