Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1-xNx layers

被引：53

作者：

Alt, HC ^{[1
]}

Egorov, AY

Riechert, H

Wiedemann, B

Meyer, JD

Michelmann, RW

Bethge, K

机构：

[1] FHM Univ Appl Sci, D-80001 Munich, Germany

[2] Infineon Technol, Corp Res CPR 7, D-81730 Munich, Germany

[3] Univ Frankfurt, Inst Nucl Phys, D-60486 Frankfurt, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 21期

关键词：

D O I：

10.1063/1.1328096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fourier-transform infrared absorption measurements have been carried out in the two-phonon region of GaAs. Implantation of the nitrogen isotopes N-14 and N-15, respectively, into bulk GaAs shows that a local vibrational mode at 471 cm(-1) (N-14) is due to isolated nitrogen. The band is also found in GaAs1-xNx(0 <x <0.03) layers grown by solid-source molecular beam epitaxy. The strength of the band correlates quantitatively with the decrease of the lattice parameter determined by x-ray diffraction for x <0.01 and can be used for the assessment of the nitrogen fraction incorporated substitutionally on anion lattice sites. (C) 2000 American Institute of Physics. [S0003-6951(00)03247-2].

引用

页码：3331 / 3333

页数：3

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