High power CW operation of InGaAsN lasers at 1.3μm

被引：99

作者：

Egorov, AY

Bernklau, D

Livshits, D

Ustinov, V

Alferov, ZI

Riechert, H

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Infineon Technol, Corp Res CPR7, D-81730 Munich, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 19期

关键词：

D O I：

10.1049/el:19991109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature, continuous-wave operation at 1.3 mu m is reported for InGaAsN triple quantum well lasers. The layers were grown by MBE using an RF-coupled plasma source for nitrogen. Large broad area lasers exhibit very low threshold current density down to 680A/cm(2) and a slope efficiency of 0.59W/A (output per two facets). Maximum output powers of 2.4 and 4W are reached at 10 degrees C under CW and pulsed operation, respectively. These values are a significant improvement over those previously published for lasers in the InGaAsN material system.

引用

页码：1643 / 1644

页数：2

共 5 条

[1] Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm [J].