Spectroscopy of nitrogen-related centers in gallium arsenide

被引：19

作者：

Alt, HC

Wiedemann, B

Bethge, K

机构：

[1] Fachhsch Munich, FB Phys Tech 06, D-80001 Munich, Germany

[2] Goethe Univ Frankfurt, Inst Kernphys, D-60486 Frankfurt, Germany

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

GaAs; N impurity; local vibrational modes (LVM); FTIR; spark source mass spectrometry (SSMS);

D O I：

10.4028/www.scientific.net/MSF.258-263.867

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nitrogen-rich poly-and monocrystalline GaAs has been investigated by Fourier transform infrared absorption spectroscopy and radiofrequency spark source mass spectrometry. N concentrations in the 10(16)-cm(-3) range are found in poly samples. A linear relationship exists between the total chemical nitrogen contamination and the intensity of the 470-cm(-1) local vibrational mode. An estimate for the calibration factor is given. The line shape parameters of this line, being significantly different from local modes of other anion site light impurities, are discussed.

引用

收藏

页码：867 / 871

页数：5

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