NITROGEN PAIR LUMINESCENCE IN GAAS

被引：166

作者：

LIU, X ^{[1
]}

PISTOL, ME ^{[1
]}

SAMUELSON, L ^{[1
]}

SCHWETLICK, S ^{[1
]}

SEIFERT, W ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT CHEM,O-7010 LEIPZIG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 15期

关键词：

D O I：

10.1063/1.102495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the first observation of different nitrogen pair complexes in GaAs. These complexes, which have been searched for since the '60s, are studied under the application of hydrostatic pressure. By carefully tuning the pressure, we make one after the other of the NNi pairs (1≤i≤10) appear in the band gap of GaAs and then become the major exciton recombination channel. We compare our results for nitrogen states in GaAs with the classical case of NNi excitons in GaP.

引用

页码：1451 / 1453

页数：3

共 17 条

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