NN2 TRAP IN GAP - A REEXAMINATION

被引：21

作者：

GIL, B

MARIETTE, H

机构：

[1] CNRS,F-34033 MONTPELLIER,FRANCE

[2] LAB PHYS SOLIDES,F-92190 MEUDON BELLEVUE,FRANCE

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.35.7999

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7999 / 8004

页数：6

共 36 条

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[4] COMPLEX ISOTOPE SPLITTING OF THE NO-PHONON LINES ASSOCIATED WITH EXCITON DECAY AT A 4-LITHIUM-ATOM ISOELECTRONIC CENTER IN SILICON
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[5] EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP
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[6] NEW ISOELECTRONIC TRAP LUMINESCENCE IN GALLIUM-PHOSPHIDE
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (04): : 747 - 762
[7] ISOELECTRONIC TRAP LI-LI-O IN GAP
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[J]. PHYSICAL REVIEW B, 1971, 4 (08): : 2596 - &
[8] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
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[J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &
[9] MODEL CALCULATION OF NITROGEN PROPERTIES IN III-V-COMPOUNDS
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[J]. PHYSICAL REVIEW B, 1986, 33 (04): : 2701 - 2712
[10] J-J COUPLING AND LOCAL-FIELD EFFECTS ON N-N PAIR SPECTRA IN GAP
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MERLE, P
MATHIEU, H
[J]. PHYSICAL REVIEW B, 1982, 25 (06): : 3987 - 4001

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