MODEL CALCULATION OF NITROGEN PROPERTIES IN III-V-COMPOUNDS

被引：26

作者：

GIL, B ^{[1
]}

ALBERT, JP ^{[1
]}

CAMASSEL, J ^{[1
]}

MATHIEU, H ^{[1
]}

LAGUILLAUME, CB ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2701

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2701 / 2712

页数：12

共 39 条

[1] ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS [J].

ALLEN, JW .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :1936-&

[2] WHY MUONS AND PROTONS ARE DEEP DONORS IN SI AND GE [J].

ALTARELLI, M ;

HSU, WY .

PHYSICAL REVIEW LETTERS, 1979, 43 (18) :1346-1349

[3]

BOGUSLAWSKI P, 1985, 17TH P INT C PHYS SE, P939

[4]

Bourgoin J., 1983, POINT DEFECTS SEMICO

[5] ELASTIC-CONSTANTS AND LATTICE ANHARMONICITY OF GASB AND GAP FROM ULTRASONIC-VELOCITY MEASUREMENTS BETWEEN 4.2 AND 300 K [J].

BOYLE, WF ;

SLADEK, RJ .

PHYSICAL REVIEW B, 1975, 11 (08) :2933-2940

[6] BINDING OF ELECTRONS BY NITROGEN PAIRS IN GAP [J].

BRAND, S ;

JAROS, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (14) :2789-2796

[7] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, J ;

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (06) :2786-2794

[8]

CHEVALIER J, 1974, J PHYS C, V3, P207

[9] EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J].

COHEN, E ;

STURGE, MD .

PHYSICAL REVIEW B, 1977, 15 (02) :1039-1051

[10]

CZAJA W, 1971, FESTKORPERPROBLEME, V11, P65

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