PHOTOLUMINESCENCE OF NITROGEN-DOPED VPE GAAS

[1] ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14): : 1936 - &

[2] ENERGY LEVELS OF NITROGEN-NITROGEN PAIRS IN GALLIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (04): : 1136 - &

[3] PHOTOLUMINESCENCE STUDY OF SHALLOW ACCEPTOR STATES IN N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3882 - 3884

[4] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON [J]. PHYSICAL REVIEW B, 1973, 7 (10): : 4547 - 4560

[5] ELECTRONIC STATES ASSOCIATED WITH THE SUBSTITUTIONAL NITROGEN IMPURITY IN GAPXAS1-X [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (03): : 525 - 539

[6] SHALLOW ACCEPTOR BINDING-ENERGY AND LIFETIME OF DONOR-ACCEPTOR PAIRS IN GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3219 - 3223

[7] OPTICAL DETERMINATION OF IMPURITY COMPENSATION IN NORMAL-TYPE GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1928 - 1934

[8] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC NITROGEN TRAP IN GAP [J]. PHYSICAL REVIEW, 1969, 188 (03): : 1228 - &

[9] MAGNETIC-FIELD AND STRESS-INDUCED SPLITTING OF NOVEL SHARP EMISSION-LINE SERIES IN SILICON ASSOCIATED WITH P, LI, OR B - NO BOUND MULTIPLE-EXCITON COMPLEXES [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (01) : 48 - 51

[10] SEIFERT W, UNPUB CRYS RES TECHN

[1] ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14): : 1936 - &

[2] ENERGY LEVELS OF NITROGEN-NITROGEN PAIRS IN GALLIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (04): : 1136 - &

[3] PHOTOLUMINESCENCE STUDY OF SHALLOW ACCEPTOR STATES IN N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3882 - 3884

[4] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON [J]. PHYSICAL REVIEW B, 1973, 7 (10): : 4547 - 4560

[5] ELECTRONIC STATES ASSOCIATED WITH THE SUBSTITUTIONAL NITROGEN IMPURITY IN GAPXAS1-X [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (03): : 525 - 539

[6] SHALLOW ACCEPTOR BINDING-ENERGY AND LIFETIME OF DONOR-ACCEPTOR PAIRS IN GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3219 - 3223

[7] OPTICAL DETERMINATION OF IMPURITY COMPENSATION IN NORMAL-TYPE GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1928 - 1934

[8] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC NITROGEN TRAP IN GAP [J]. PHYSICAL REVIEW, 1969, 188 (03): : 1228 - &

[9] MAGNETIC-FIELD AND STRESS-INDUCED SPLITTING OF NOVEL SHARP EMISSION-LINE SERIES IN SILICON ASSOCIATED WITH P, LI, OR B - NO BOUND MULTIPLE-EXCITON COMPLEXES [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (01) : 48 - 51

[10] SEIFERT W, UNPUB CRYS RES TECHN