OPTICAL DETERMINATION OF IMPURITY COMPENSATION IN NORMAL-TYPE GALLIUM-ARSENIDE

被引:55
作者
KAMIYA, T
WAGNER, E
机构
[1] UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
[2] MAX PLANCK INST FESTKORPER FORSCH,D-7000 STUTTGART,FED REP GER
关键词
D O I
10.1063/1.323950
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1928 / 1934
页数:7
相关论文
共 30 条
[1]  
ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P5
[2]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[3]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[4]   ACCEPTOR-TO-BAND TRANSITIONS IN SEMICONDUCTORS - PHOTOLUMINESCENCE, EXPONENTIAL ABSORPTION EDGES, AND FINAL-STATE INTERACTIONS [J].
DOW, JD ;
SMITH, DL ;
LEDERMAN, FL .
PHYSICAL REVIEW B, 1973, 8 (10) :4612-4626
[6]  
GROBE E, 1972, Z ANGEW PHYSIK, V32, P381
[7]   SHALLOW ACCEPTOR BINDING-ENERGY AND LIFETIME OF DONOR-ACCEPTOR PAIRS IN GALLIUM-ARSENIDE [J].
KAMIYA, T ;
WAGNER, E .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3219-3223
[8]  
KAMIYA T, 1975, EUROPEAN SOLID STATE
[9]   SCREENING BY FIXED CHARGES IN COMPENSATED SEMICONDUCTORS [J].
LARSEN, DM .
PHYSICAL REVIEW B, 1975, 11 (10) :3904-3909
[10]   VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].
LAWAETZ, P .
PHYSICAL REVIEW B, 1971, 4 (10) :3460-&