OPTICAL DETERMINATION OF IMPURITY COMPENSATION IN NORMAL-TYPE GALLIUM-ARSENIDE

被引:55
作者
KAMIYA, T
WAGNER, E
机构
[1] UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
[2] MAX PLANCK INST FESTKORPER FORSCH,D-7000 STUTTGART,FED REP GER
关键词
D O I
10.1063/1.323950
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1928 / 1934
页数:7
相关论文
共 30 条
[21]   PRECISION VERIFICATION OF EFFECTIVE MASS THEORY FOR SHALLOW DONORS IN GAAS [J].
STILLMAN, GE ;
LARSEN, DM ;
WOLFE, CM ;
BRANDT, RC .
SOLID STATE COMMUNICATIONS, 1971, 9 (24) :2245-&
[22]   MAGNETOSPECTROSCOPY OF SHALLOW DONORS IN GAAS [J].
STILLMAN, GE ;
WOLFE, CM ;
DIMMOCK, JO .
SOLID STATE COMMUNICATIONS, 1969, 7 (13) :921-&
[23]   FAR-INFRARED DONOR ABSORPTION AND PHOTOCONDUCTIVITY IN EPITAXIAL N-TYPE GAAS [J].
SUMMERS, CJ ;
DINGLE, R ;
HILL, DE .
PHYSICAL REVIEW B, 1970, 1 (04) :1603-&
[24]   KINETICS OF RADIATIVE RECOMBINATION AT RANDOMLY DISTRIBUTED DONORS AND ACCEPTORS [J].
THOMAS, DG ;
HOPFIELD, JJ ;
AUGUSTYNIAK, WM .
PHYSICAL REVIEW, 1965, 140 (1A) :A202-+
[25]  
WAGNER EB, TO BE PUBLISHED
[26]   EFFECT OF SEMICONDUCTOR INHOMOGENEITIES ON CARRIER MOBILITIES MEASURED BY VAN DER VANDERPAUW METHOD [J].
WESTBROOK, RD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1212-1215
[27]  
Williams E.W., 1992, SEMICONDUCTOR SEMIME, V8, P321
[28]   IONIZED IMPURITY DENSITY IN N-TYPE GAAS [J].
WOLFE, CM ;
STILLMAN, GE ;
DIMMOCK, JO .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :504-&
[29]   ELECTRON MOBILITY IN HIGH-PURITY GAAS [J].
WOLFE, CM ;
STILLMAN, GE ;
LINDLEY, WT .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3088-&
[30]  
WOLFE CM, 1975, SEMICONDUCT SEMIMET, V10, P175