SCREENING BY FIXED CHARGES IN COMPENSATED SEMICONDUCTORS

被引：10

作者：

LARSEN, DM ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.11.3904

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3904 / 3909

页数：6

共 8 条

[1] MAGNETIC FREEZE-OUT OF ELECTRONS IN EXTRINSIC SEMICONDUCTORS [J].

DYAKONOV, MI ;

EFROS, AL ;

MITCHELL, DL .

PHYSICAL REVIEW, 1969, 180 (03) :813-&

[2]

KELDYSH LV, 1964, SOV PHYS-SOL STATE, V5, P2481

[3]

KELDYSH LV, 1963, FIZ TVERD TELA, V5, P3378

[4] INHOMOGENEOUS LINE BROADENING IN DONOR MAGNETO-OPTICAL SPECTRA [J].

LARSEN, DM .

PHYSICAL REVIEW B, 1973, 8 (02) :535-552

[5] BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS [J].

MORGAN, TN .

PHYSICAL REVIEW, 1965, 139 (1A) :A343-&

NEUMARK, GF .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :408-+

[7] LOW-TEMPERATURE LIMIT OF SCREENING LENGTH IN SEMICONDUCTORS [J].

STERN, F .

[8] SHAPES OF INHOMOGENEOUSLY BROADENED RESONANCE LINES IN SOLIDS [J].

STONEHAM, AM .