LOW-TEMPERATURE LIMIT OF SCREENING LENGTH IN SEMICONDUCTORS

被引：41

作者：

STERN, F ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.9.4597

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4597 / 4598

页数：2

共 8 条

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