LOCAL SYMMETRY OF NITROGEN PAIRS IN GAP

被引：29

作者：

GIL, B

CAMASSEL, J

ALBERT, JP

MATHIEU, H

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2690

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2690 / 2700

页数：11

共 17 条

[1]

ALTIER J, 1977, P INT C MEASUREMENTS, P65

[2] COMPLEX ISOTOPE SPLITTING OF THE NO-PHONON LINES ASSOCIATED WITH EXCITON DECAY AT A 4-LITHIUM-ATOM ISOELECTRONIC CENTER IN SILICON [J].

CANHAM, L ;

DAVIES, G ;

LIGHTOWLERS, EC ;

BLACKMORE, GW .

PHYSICA B & C, 1983, 117 (MAR) :119-121

[3] EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J].

COHEN, E ;

STURGE, MD .

PHYSICAL REVIEW B, 1977, 15 (02) :1039-1051

[4] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1968, 175 (03) :991-&

[5] J-J COUPLING AND LOCAL-FIELD EFFECTS ON N-N PAIR SPECTRA IN GAP [J].

GIL, B ;

CAMASSEL, J ;

MERLE, P ;

MATHIEU, H .

PHYSICAL REVIEW B, 1982, 25 (06) :3987-4001

[6] LUMINESCENCE EXCITATION SPECTROSCOPY OF NN PAIRS IN GAP-N UNDER UNIAXIAL-STRESS [J].

GIL, B ;

MATHIEU, H ;

THOMAS, JL ;

MARTIN, L ;

CAMASSEL, J ;

ALLEGRE, J .

SOLID STATE COMMUNICATIONS, 1985, 53 (08) :723-726

[7] HYDROSTATIC-PRESSURE DEPENDENCE OF BOUND EXCITONS IN GAP [J].

GIL, B ;

BAJ, M ;

CAMASSEL, J ;

MATHIEU, H ;

LAGUILLAUME, CB ;

MESTRES, N ;

PASCUAL, J .

PHYSICAL REVIEW B, 1984, 29 (06) :3398-3407

[8]

HOLONYAK N, 1979, SEMICONDUCTORS SEMIM, V14, P38

[9] ISOELECTRONIC DONORS AND ACCEPTORS [J].

HOPFIELD, JJ ;

THOMAS, DG ;

LYNCH, RT .

PHYSICAL REVIEW LETTERS, 1966, 17 (06) :312-&

[10]

KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

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